2SC3279_11

2SC3279 Elektronische Bauelemente 2A , 30V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC current gain and excellent hFE linearity. Low saturation voltage. G H TO-92 CLASSIFICATION OF hFE Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N Range 140~240 200~330 300~450 2SC3279-P 420~600 K J A B D 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 30 10 6 2 0.75 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Collector Output Capacitance Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE Cob fT Min. 30 10 6 140 - Typ. 27 150 Max. 0.1 0.1 600 0.82 1.5 - Unit V V V µA µA V V pF MHz Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=30V, IE=0 VEB=6V, IC=0 VCE=1V, IC=500mA IC=2A, IB=100mA VCE=1V, IC=2A VCB=10V, IE=0, f=1MHz VCE=1V, IC=0.5A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Feb-2011 Rev. B Page 1 of 2 2SC3279 Elektronische Bauelemente 2A , 30V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Feb-2011 Rev. B Page 2 of 2