2SC3356F

2SC3356F Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 2 Emitter A 3 L 3 Collector 3 Top View 1 2 CB 1 2 K E D 1 MARKING R = hFE Coding Base F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 20 12 3 0.1 200 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance (TA = 25°C unless otherwise noted) Symbol BVCBO BVCEO ICBO IEBO hFE* fT NF Min. 20 12 50 - Typ. 7 - Max. 1 1 250 2 Unit V V μA μA GHz dB Test Conditions IC=10μA, IE=0 IC= 1mA, IB=0 VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC= 20mA VCE=10V, IC= 20mA VCE=10V, IC= 7mA, f = 1GHz *pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2% CLASSIFICATION OF hFE Rank Coding Range Marking Q 23 50 - 100 R23 R 24 80 - 160 R24 S 25 125 – 250 R25 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 1 of 2 2SC3356F Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 2 of 2