2SC3650

2SC3650 NPN Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES Low collector-emitter saturation voltage VCE(sat) High DC current gain Large current capacity LF amp, various drivers, muting circuit MAXIMUM RATINGS (TA=25 oC unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 15 1.2 500 150 -55-150 Units V V V A mW ℃ ℃ REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance MARKING CF VCE(sat) VBE(sat) fT Cob VCE=5V, IC=10 A IC=500 A, IB=10mA IC=500 A, IB=10mA VCE=10 V, IC=50mA VCB=10V, IE=0, f=1MHz 220 17 600 0.5 1.2 V V MHz pF Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 Test IC=10 µA, IE=0 IC=1mA, IB=0 IE=10 µA, IC=0 VCB=20V, IE=0 VEB=10 V, IC=0 VCE=5V, IC=500mA 800 conditions MIN 30 25 15 0.1 0.1 3200 TYP MAX UNIT V V V µA µA http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 1 of 3 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 2 of 3 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 3 of 3