2SC388
Elektronische Bauelemente 0.05A , 30V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G H
TV Final picture if amplifier applications
J A B K D
Emitter Collector Base
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
REF. A B C D E F G H J K
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Rating
30 25 4 50 300 150, -55~150
Unit
V V V mA mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation voltage Transition Frequency Collector Output Capacitance Power Gain
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe
Min.
30 25 4 20 300 0.8 28
Typ.
-
Max.
0.1 0.1 200 0.2 1.2 2 36
Unit
V V V μA μA V V MHz pF dB
Test Condition
IC=10μA, IE=0 IC=5mA, IB=0 IE=10μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA IC=15mA, IB=1.5mA VCE=12.5V, IC=12.5mA VCB=10V, IE=0, f=1MHz VCC=12.5V, IE=-12.5mA, f=45MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 1 of 2
2SC388
Elektronische Bauelemente 0.05A , 30V NPN Plastic-Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Mar-2011 Rev. A
Page 2 of 2
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