2SC4177

2SC4177 Elektronische Bauelemente 0.1A , 60V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-323 A 3 3 High DC Current Gain. High Voltage. Complementary to 2SA1611 1 L Top View 2 CB 1 2 APPLICATIONS  K E D General Purpose Amplification F G H J CLASSIFICATION OF hFE Product-Rank Range Marking 2SC4177-L4 90~180 L4 2SC4177-L5 135~270 L5 2SC4177-L6 200~400 L6 2SC4177-L7 300~600 L7 REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector PACKAGE INFORMATION Package SOT-323 MPQ 3K LeaderSize 7’ inch  Base   Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction & Storage temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 60 50 5 100 150 833 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain1 Collector-Base Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob Min. 60 50 5 90 0.55 - Typ. 250 3 Max. 100 100 600 0.3 1 0.65 - Unit V V V nA nA V V V MHz pF Test Condition IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz Note: 1. Pulse test: pulse width≦350μs, duty cycle≦2.0% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Mar-2011 Rev. A Page 1 of 1