2SC4617_11

2SC4617 Elektronische Bauelemente 0.15A , 60V NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low Cob. Cob=2.0pF Complement of 2SA1774 A M 3 SOT-523 3 Top View CLASSIFICATION OF hFE Product-Rank Range Marking 2SC4617-Q 120~270 BQ 2SC4617-R 180~390 BR 2SC4617-S 270~560 BS F K CB 1 2 2 1 L E D G REF. Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 H REF. G H J K L M J Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 PACKAGE INFORMATION Package SOT-523 MPQ 3K LeaderSize 7’ inch A B C D E F Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Collector Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 60 50 7 150 150 150, -55 ~ 150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage * DC current gain Transition frequency Collector output capacitance * Pulse Test :Pulse Width ≤300us,D.C ≤ 2% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cob Min. 60 50 7 120 - Typ. 180 - Max. 0.1 0.1 0.4 560 3.5 Unit V V V μA μA V Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=60V, IE=0 VEB= 7V, IC=0 IC=50mA, IB=5mA VCE=6V, IC=1mA MHz pF VCE=12V, IE=2mA, f=100MHz VCB=12V, IE=0, f=1MHz 24-Feb-2011 Rev. D Page 1 of 2 2SC4617 Elektronische Bauelemente 0.15A , 60V NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Feb-2011 Rev. D Page 2 of 2