2SC4672

2SC4672 Elektronische Bauelemente RoHS Compliant Product NPN Silicon Epitaxial Silicon Transistor SOT-89 Description The 2SC4672 is designed for low frequency amplifier applications. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.1V At IC/IB=1A/50mA REF. A B C D E F o Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at TA=25 C Symbol VCBO VCEO VE BO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Junction and Storage Temperature o Parameter Value 60 50 6 2 5 2 -55~+150 Units V V V A W O IC PD TJ,Tstg C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-B a se Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Symbol B V CBO B VC E O B V EBO I CBO I E BO *VCE(sat) Min 60 50 6 - Typ. 0.1 - Max 100 100 0.35 U n it V V V nA nA V Test Conditions I C=50 µA,IE=0 I C=1mA,IB=0 I E=50 µA,IC=0 VCB= 6 0V,IE=0 VEB=5V, IC=0 I C=1A,IB=50mA VCE= 2 V, I C=500 mA VCE= 2 V, IC=500m A,f=100MHz VCB=10V , f=1MHz,IE=0 *hFE 120 400 fT 210 Output Capacitance Cob 25 Measured under pulse condition. Pu l s e w i dt h≦380µs , Du t y Cy c l e≦2% * MH z pF Classification of hFE Rank Range A 120~240 B 200~400 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SC4672 Elektronische Bauelemente NPN Silicon Epitaxial Silicon Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2