2SC5706D

2SC5706 NPN Silicon Elektronische Bauelemente RoHS Compliant Product D General Purpose Transistor TO-252 6. 50 5. 30 0. 15 0. 10 2. 30 0. 51 0. 05 0. 10 FEATURES 9. 70 0. 75 •Large current capacitance •Low collector-to-emitter saturation voltage •High-speed switching •High allowable power dissipation MARKING : 5706 (With Date Code) C 5 0. 20 0. 10 0. 51 0 0. 10 1. 20 0. 10 5 5 0. 15 0. 6 0 9 0. 51 0. 80 0. 10 2. 30 0. 10 0. 60 2. 30 0. 10 0. 10 MAXIMUM RATINGS* TA=25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Junction Temperature Storage Temperature Total Power Dissipation Symbol VCBO VCES VCEO VEBO I CBO I CP IB Tj TSTG PD PD(TC=25 °C) O 1. 60 B Ratings 80 80 50 6 5 7.5 1.2 +150 -55~+150 0.8 15 C E Unit V V V V A A A °C °C W W ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitte r-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage 1 Collector Saturation Voltage 2 Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time http://www.SeCoSGmbH.com Symbol BVCBO BVCES BVCEO BVEBO I CBO I EBO *VCE(sat)1 *VCE(sat)2 *V BE(sat) *hFE fT Cob ton tstg tf Min 80 80 50 6 200 - Typ. 400 15 35 300 20 Max 1 1 135 240 1.2 560 - Unit. V V V V µA µA mV mV V Test Conditions I C=1 0µA, I E=0 I C=1 00µA, RBE=0 I C=1mA, RBE=∞ I E=10µA, I C=0 VCB=40V, I E=0 VEB=4V, I C=0 I C=1 A, I B=50mA I C=2 A, I B=100mA I C=2 A, I B=100mA VCE=2V, I C=500mA MHz pF ns ns ns VCE=10 V, IC=500mA VCB=10 V, f=1MHz See specified test circuit. See specified test circuit. See specified test circuit. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2. 70 0. 20 5. 50 0. 10 2SC5706D Elektronische Bauelemente NPN Silicon General Purpose Transistor SwitchingTimeTest Circuit Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SC5706D Elektronische Bauelemente NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3