2SD1005

2SD1005 Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package SOT-89 4 High Breakdown Voltage Excellent DC Current Gain Linearity A BC 3 E C 1 2 CLASSIFICATION OF hFE(1) Product-Rank Range Marking 2SD1005-W 90~180 BW 2SD1005-V 135~270 BV 2SD1005-U B E D F G H K J L 200~400 BU Collector 2 PACKAGE INFORMATION Package SOT-89 MPQ 1K Leader Size 7 inch 1 Base REF. A B C D E F 3 Emitter Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Maximum Junction to Ambient Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings 100 80 5 1 500 250 150, -55~150 Unit V V V A mW ° /W C ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition Frequency Collector Output Capacitance *Pulse test http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE* VCE(sat)* VBE(sat)* VBE* fT COB Min. 100 80 5 90 25 0.6 - Typ. 160 12 Max. 0.1 0.1 400 0.5 1.5 0.7 - Unit V V V µA µA Test conditions IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=500mA V V V MHz pF IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V,IC=10mA VCE=5V,IC=10mA VCB=10V, IE=0, f=1MHz 10-Nov-2011 Rev. A Page 1 of 1