2SD1767

2SD1767 Elektronische Bauelemente 0.7A , 80V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Breakdown Voltage and Current Excellent DC Current Gain Linearity Complementary to 2SB1189 SOT-89 4 CLASSIFICATION OF hFE Product-Rank Range Marking 2SD1767-P 82~180 DCP 2SD1767-Q 120~270 DCQ 2SD1767-R 180~390 DCR Collector B F G H A E BC 3 E C 1 2 D K J L PACKAGE INFORMATION Package SOT-89 MPQ 1K Leader Size 7 inch 1 Base 2 REF. A B C D E F 3 Emitter Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Maximum Junction to Ambient Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings 80 80 5 700 500 250 150, -55~150 Unit V V V mA mW ° /W C ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT COB Min. 80 80 5 82 - Typ. 120 10 Max. 0.5 0.5 390 0.4 - Unit V V V µA µA Test conditions IC=50µA, IE=0 IC=2mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=4V, IC=0 VCE=3V, IC= 100mA V MHz pF IC=500mA, IB= 50mA VCE=10V,IC=50mA,f=100MH z VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Nov-2011 Rev. A Page 1 of 1