2SD1781

2SD1781 Elektronische Bauelemente 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197 A L 3 3 Top View 1 2 CB 1 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SD1781-Q 120 ~ 270 AFQ K E D 2SD1781-R 180 ~ 390 AFR F G H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch  Emitter Collector REF. A B C D E F  Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP.  Base ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 40 32 5 0.8 200 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector–Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 5 120 - Typ. 150 10 Max. 0.5 0.5 390 0.4 - Unit V V V Test Conditions IC = 50A, IE = 0 IC = 1mA, IB = 0 IE = 50A, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC = 100mA, VCE = 3V IC = 500mA, IB = 50mA VCE = 5V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz A A V MHz pF http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 1 of 3 2SD1781 Elektronische Bauelemente 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 2 of 3 2SD1781 Elektronische Bauelemente 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Dec-2010 Rev. A Page 3 of 3