2SD1781K

2SD1781K

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SD1781K - NPN Silicon Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD1781K 数据手册
2SD1781K Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K 2 Base Collector A L 3 3 3 Top View 1 2 CB 1 2 K E D 1 Emitter F REF. G Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. MARKING AF = hFE ranking A B C D E F REF. G H J K L ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 40 32 5 0.8 200 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector–Emitter Saturation Voltage Transition Frequency Collector Output Capacitance (TA = 25°C unless otherwise noted) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT COB Min. 40 32 5 120 - Typ. 150 10 Max. 0.5 0.5 390 0.4 - Unit V V V μA μA V MHz pF Test Conditions IC = 50μA, IE = 0 IC = 1mA, IB = 0 IE = 50μA, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC = 100mA, VCE = 3.0V IC = 500mA, IB = 50mA VCE = 5V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz CLASSIFICATION OF hFE Rank Range Marking Q 120 – 270 AFQ R 180-390 AFR http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 1 of 2 2SD1781K Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 2 of 2
2SD1781K
1. 物料型号: - 型号:2SD1781K - 描述:NPN型硅塑料封装晶体管

2. 器件简介: - 该器件是一个NPN型硅晶体管,符合RoHS标准,无卤素和无铅产品,型号后缀为“-C”。 - 封装类型:SOT-23。

3. 引脚分配: - 发射极(Emitter)。

4. 参数特性: - 极低的V_{CE}(sat),V_{CE}(sat) < 0.4V(典型值),在I_{C}/I_{B}=500mA/50mA时。 - 与2SB1197K互补。

5. 功能详解: - 该器件具有低饱和压降、高直流电流增益(hFE)等特点,适用于需要低功耗和高效率的应用场合。

6. 应用信息: - 由于其低功耗和高增益特性,2SD1781K适用于音频放大器、开关电源和无线通信设备等应用。

7. 封装信息: - 封装类型:SOT-23。 - 标记:AF(表示hFE等级)。

8. 电气特性: - 包括绝对最大额定值和电气特性,如集电极-基极击穿电压、集电极-发射极击穿电压、截止电流、直流电流增益、饱和压降、过渡频率和集电极输出电容等。
2SD1781K 价格&库存

很抱歉,暂时无法提供与“2SD1781K”相匹配的价格&库存,您可以联系我们找货

免费人工找货