2SD1819A

2SD1819A NPN Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor SOT-323 FEATURES High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 3 Dim A L Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 A B C BS 2 Complementary to 2SB1218A 1 Top View D G H J COLLECTOR 3 1 BASE V G C K K J 2 EMITTER D H L S V MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value 60 50 7 100 150 150 -55-150 All Dimension in mm Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Base cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob VCE=2V, IC=100mA IC=100mA, IB=10mA VCB=10V, IC=2mA, f=200MHz VCB=10V, IE=0, f=1MHz Test IC =10μA, IE=0 IC =2mA, IB=0 IE=10μA, IC=0 VCB=20V, IE=0 VCE=10V, IB=0 VEB=7V, IC=0 VCE=10V, IC=2mA conditions MIN TYP MAX UNIT V V V 60 50 7 0.1 100 μA μA μA 0.1 160 90 0.3 150 3.5 460 V MHz pF CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com hFE(1) Q 160-260 ZQ R 210-340 ZR S 290-460 ZS Any changing of specification will not be informed individual 01-Jun-2007 Rev. A Page 1 of 2 2SD1819A NPN Silicon Elektronische Bauelemente General Purpose Transistor Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. A Page 2 of 2