2SD1898

2SD1898 NPN Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor Description SOT-89 The 2SD1898 is designed for switching applications. REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temper atur e Stor age Temper atur e C ollector to B as e Voltage C ollector to E mitter Voltage Emitter to B as e Voltage C ollector Cur r ent Total P ow er Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC ICP (Single puls e P w=20ms) PD Ratings +150 -55 ~ +150 100 80 5.0 1 2 500 V V V A A mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(s at) hFE fT C ob at Ta = 25 : M in. 100 80 5 82 Typ. 100 25 M ax. 1 1 400 390 MHZ pF Unit V V V uA uA mV IC=50uA IC=1mA IE=50uA VCB=80V VEB=4V IC=500mA , IB =20mA VCE=3V, IC=500mA VCE=10V,IC=50mA ,f=100MHZ VCB=10V,IE=0, f=1MHz Test Conditions Classification Of hFE Rank hFE P 82- 180 Q 120-270 R 180-390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 1 of 2 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 2 of 2