2SD1949

2SD1949 NPN Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor FEATURES A SOT-323 L 3 Dim A B BS 2 Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 * High current.(IC=5A) * Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA V COLLECTOR 3 1 BASE 1 Top View C D G H G C D H K J J K L S V 2 EMITTER All Dimension in mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value 50 50 5 500 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob unless Test otherwise specified） MIN 50 50 5 0.5 0.5 120 390 0.4 250 6.5 V MHz pF TYP MAX UNIT V V V µA µA conditions IC= 100µA , IE=0 IC=1mA , IB=0 IE= 100µA, IC=0 VCB= 30 V, IE=0 VEB=4V, IC=0 VCE=3V, IC=10mA IC= 150mA, IB=15mA VCE=5V, IC=20mA f=100 MHz VCB=10V, IE=0,f=1 MHz CLASSIFICATION OF hFE Rank Range Marking Q 120-270 YQ R 180-390 YR http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 2SD1949 NPN Silicon Elektronische Bauelemente General Purpose Transistor Electrical characteristic curves 200 VCE=6V 100 COLLECTOR CURRENT : IC (mA) 0.50 VCE=6V 0.45 0.40 0.35 1000 500 DC CURRENT GAIN hFE Ta=25 C COLLECTOR CURRENT : IC (mA) 100 50 20 10 C 80 60 0.30 0.25 200 1V VCE=3V 25 C Ta=100 -25 C 5 2 1 0.5 0.2 0.1 0 0.2 40 0.20 0.15 100 20 0.10 0.05 IB=0mA 50 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 5 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 BASE TO VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT IC (mA) Fig.1 Ground emitter propagation characteristics Fig.2 Ground emitter output characteristics Fig.3 DC current gain vs. Collector current ( ) 1000 500 DC CURRENT GAIN hFE Ta=75 C 25 C VCE=10V COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25 C 0.5 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.5 IC/IB=10 0.2 100/1 IC/IB= 50/1 200 -25 C 0.2 0.1 100 0.1 50 0.05 20/1 0.05 25 C Ta=75 C -25 C 10/1 20 1 2 5 10 20 50 100 200 500 1000 0.02 5 10 20 50 100 200 500 0.02 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Fig.4 DC current gain vs. Collector currnet ( ) Fig.5 Collector-emitter saturation voltage vs. Collector current Fig.6 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 50 Cib 20 Cob 10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=25 C f=1MHz IE=0A Ta=25 C 500 VCE=6V 200 5 100 0.1 0.2 0.5 1 2 5 10 20 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.7 Input-and-output capacity vs.voltage characteristic Fig.8 Transition frequency vs.emitter current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4