2SD2114

2SD2114 Elektronische Bauelemente 0.5 A, 25 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High DC current gain :hFE = 1200(Typ) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) PACKAGE DIMENSIONS 3 Collector 1 Base SOT-23 Dim A 2 Emitter Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 B C D G A L 3 H K BS 2 J J K C Top View 1 L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings 25 20 12 500 250 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *hFE1 VCE(sat) fT COB R(ON) Min. 25 20 12 820 - Typ. 350 8 0.8 Max. 0.5 0.5 2700 0.4 - Unit V V V uA uA IC=10uA IC=1mA IE=10uA VCB=20V VEB=10V VCE=3V, IC=10mA V MHz pF Ω Test Conditions IC=500mA, IB=20mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz VIN=0.1V(rms),IB=1mA, f=1KHZ CLASSIFICATION OF hFE1 Rank Range Marking 01-June-2005 Rev. A V 820 - 1800 BBV W 1200 - 2700 BBW Page 1 of 3 2SD2114 Elektronische Bauelemente 0.5 A, 25 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 2 of 3 2SD2114 Elektronische Bauelemente 0.5 A, 25 V NPN Plastic Encapsulated Transistor 01-June-2005 Rev. A Page 3 of 3