2SD2114
Elektronische Bauelemente 0.5A , 25V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.)
A
L
3
SOT-23
3
Top View
CB
1 2 2
CLASSIFICATION OF hFE
Product-Rank Range Marking 2SD2114-V 820~1800 BBV 2SD2114-W 1200~2700 BBW
F K
1
E D G
Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50
H
J
PACKAGE INFORMATION
Package SOT-23 MPQ 3K LeaderSize 7’ inch
REF. A B C D E F
REF. G H J K L
Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02
Collector
3 1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Ratings
25 20 12 500 250 150, -55~150
Unit
V V V mA mW ° C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance On Resistance
http://www.SeCoSGmbH.com/
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob R(on)
Min.
25 20 12 820 -
Typ.
350 8 0.8
Max.
0.5 0.5 2700 0.4 -
Unit
V V V µA µA V MHz pF
Test Conditions
IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=10V, IC=0 VCE=3V, IC=10mA IC=500mA, IB=20mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz Vin=0.1V(rms), IB=1mA, f=1KHz
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. B
Page 1 of 3
2SD2114
Elektronische Bauelemente 0.5A , 25V NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. B
Page 2 of 3
2SD2114
Elektronische Bauelemente 0.5A , 25V NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. B
Page 3 of 3
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