2SD2118

2SD2118 NPN Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor D-Pack FEATURES 6. 50 5. 30 0. 15 0. 10 2. 30 0. 51 0. 05 0. 10 C 5 0. 20 0. 10 • Low Collector-to-Emitter Voltage (Typ. 0.25 V) • Excellent DC Current Gain Characteristics 0. 51 0 0. 10 1. 20 9. 7 0 0. 75 0. 10 5 5 0. 15 0. 6 0 9 0. 51 0. 80 0. 10 2. 30 0. 10 0. 60 2. 30 0. 10 0. 10 1. 60 B C E MAXIMUM RATINGS* (TA=25oC unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj TSTG Ratings 50 20 6 5 1 - 55~+150 - 55~+150 Unit V V V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) O Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitte r-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO I CBO I EBO VCE(sat) hFE fT Cob Min 50 20 6 120 - Typ. 0.25 150 30 Max 0.5 0.5 1 390 - Unit. V V V µA µA V Test Conditions I C=50 µA, I E=0 I C=1mA, IB=0 I E=50µA, I C=0 VCB=40V, I E=0 VEB=5V, I C=0 IC=4A, I B=100mA VCE=2V , I C=500mA MHz pF VCE=6V, IC=50mA, f=100MHz VCB=20 V, IE=0, f=1MHz CLASSIFICATION OF hFE Rank Range Q 120-270 R 180-390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2. 7 0 0. 20 5. 50 0. 10 2SD2118 Elektronische Bauelemente Typical Characteristics NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SD2118 Elektronische Bauelemente NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3