2SD2142_11

2SD2142 Elektronische Bauelemente 0.3A , 40V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Darlington connection for a high hFE. High input impedance. A L 3 SOT-23 3 Top View CB 1 2 2 MARKING R1M K 1 E D PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch F G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 REF. A B C D E F REF. G H J K L Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings 40 32 12 300 200 625 150, -55~150 Unit V V V mA mW ° /W C ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 12 5000 - Typ. 200 2.5 Max. 0.1 0.1 1.4 - Unit V V V µA µA V MHz pF Test Conditions IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=12V, IC=0 VCE=3V, IC=100mA IC=200mA, IB=0.2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 2 2SD2142 Elektronische Bauelemente 0.3A , 40V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 2 of 2