2SD2150_09

2SD2150 Elektronische Bauelemente 3 A, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A Collector 1 A E C 4 2 3 2 BC E B D F G H K J L 1 Base 3 Emitter MARKING CFR CFS REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 40 20 6 3 500 150, -55~150 UNIT V V V A mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE* VCE(sat) * fT* COB MIN. 40 20 6 180 - TYP. 290 25 MAX. 0.1 0.1 560 0.5 - UNIT V V V µA µA V MHz pF *Pulse test: tP≦300µS, δ≦0.02 IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0 VCE=2V, IC= 100mA IC=2A, IB= 100mA VCE=2V, IC=-500mA, f=100MHz VCB=10V, IE=0, f=1MHz TEST CONDITIONS CLASSIFICATION OF hFE Rank Range Marking R 180-390 CFR S 270-560 CFS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 6-Nov-2009 Rev. B Page 1 of 2 2SD2150 Elektronische Bauelemente 3 A, 40 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 6-Nov-2009 Rev. B Page 2 of 2