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2SD601A

2SD601A

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SD601A - NPN Plastic-Encapsulate Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SD601A 数据手册
2SD601A Elektronische Bauelemente 0.1A , 60V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) A L 3 SOT-23 3 Top View CLASSIFICATION OF hFE Product-Rank Range Marking Code 2SD601A-Q 160~260 ZQ 2SD601A-R 210~340 ZR 2SD601A-S 290~460 ZS F K CB 1 2 2 1 E D G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 60 50 7 100 200 150, -55~150 Unit V V V mA mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector to Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE (1) hFE (2) fT Cob Min. 60 50 7 160 90 - Typ. 150 3.5 Max. 0.1 100 0.3 460 - Unit V V V µA µA V Test Conditions IC=10µA, IE=0 IC=2mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=10V, IC=0 IC=100mA, IB=10mA VCE=10V, IC=2mA VCE=2V, IC=100mA VCE=10V, IC=2mA, f=200MHz VCB=10V, IE=0, f=1MHz MHz pF Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 1
2SD601A 价格&库存

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