2SD602

2SD602, 602A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE(sat) 3 Collector 1 Base SOT-23 Dim A 2 Emitter Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 B C D G MARKING CODE 2SD602: 2SD602A: WQ1, WR1, WS1 XQ, XR, XS 1 3 A L K BS 2 H J J K C Top View L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature 2SD602 2SD602A 2SD602 2SD602A Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings 30 60 25 50 5 500 200 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage (pulse test) DC Current Gain (pulse test) Transition Frequency Output Capacitance TEST CONDITIONS IC = 10 µA, IE = 0 IC = 10 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 20V, IB = 0 VEB = 5V, IC = 0 IC = 300mA, IB = 30mA VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA VCE = 10V, IC = 50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 2SD602 2SD602A 2SD602 2SD602A SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICEO IEBO VCE(sat) hFE(1) hFE(2) fT COB MIN. 30 60 25 50 5 85 40 - TYP. - MAX. 0.1 0.1 UNIT V V V μA μA V 200 - 0.6 340 15 MHz pF CLASSIFICATION OF hFE1 Rank Range 2SD602 2SD602A Q 85 - 170 85 - 170 R 120 - 240 120 - 240 S 170 - 340 170 - 340 01-June-2005 Rev. A Page 1 of 2 2SD602, 602A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 2 of 2