2SD602_11

2SD602 / 2SD602A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low collector to emitter saturation voltage VCE(sat) A L 3 SOT-23 3 CLASSIFICATION OF hFE (1) Product-Rank Range Marking Code Product-Rank Range Marking Code 2SD602-Q 85~170 WQ1 2SD602A-Q 85~170 XQ 2SD602-R 120~240 WR1 2SD602A-R 120~240 XR 2SD602-S 170~340 WS1 F 1 Top View 2 CB 1 2 K E D G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 2SD602A-S 170~340 XS PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch 1 Base Collector 3 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage 2SD602 2SD602A 2SD602 2SD602A Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings 30 60 25 50 5 500 200 625 150, -55~150 Unit V V V mA mW ° /W C ° C Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 3 2SD602 / 2SD602A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown 2SD602 Voltage 2SD602A Collector to Emitter Breakdown 2SD602 Voltage 2SD602A Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance *Pulse test: Pulse width≦350µS, duty cycle≦2.0% Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO * hFE (1) * hFE (2) * VCE(sat) fT Cob Min. 30 60 25 50 5 85 40 - Typ. 200 - Max. 0.1 0.1 340 0.6 15 Unit V V V µA µA Test Conditions IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=5V, IC=0 VCE=10V, IC=150mA VCE=10V, IC=500mA V IC=300mA, IB=30mA MHz VCE=10V, IC=50mA, f=200MHz pF VCB=10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 2 of 3 2SD602 / 2SD602A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 3 of 3