2SD667A

2SD667A Elektronische Bauelemente 1A , 120V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB647A A TO-92MOD D B CLASSIFICATION OF hFE (1) Product-Rank Range 2SD667A-B 60~120 2SD667A-C 100~200 2SD667A-D 160~320 K E C F N G H M 1 Emitter 2 Collector 3 Base L J Millimeter Min. Max. 1.70 2.05 2.70 3.20 0.85 1.15 1.60 Max 0.00 0.40 4.00 Min Collector 2 REF. 3 Base 1 Emitter A B C D E F G Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J K L M N ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 120 100 5 1 0.9 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE fT Cob Min. 120 100 5 60 30 - Typ. 140 12 Max. 10 10 320 1 1.5 - Unit V V V µA µA Test Conditions IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=150mA VCE=5V, IC=500mA IC=500mA, IB=50mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz V V MHz pF http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 7-Oct-2011 Rev. A Page 1 of 1