3DD13003B

3DD13003B Elektronische Bauelemente 1.5A , 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications A B D TO-92 REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 2 3 Base E C F G H 1 Emitter J 1Emitter 2Collector 3Base ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 700 400 9 1.5 900 150, -55~150 Unit V V V A mW ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Storage time Fall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat) fT tS tF Min. 700 400 9 20 4 - Typ. - Max. 100 50 10 30 3 0.8 1 4 0.7 Unit V V V µA µA Test Condition IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=10V, IC=400mA IC=1.5A, IB=500mA IC=0.5A, IB=100mA IC=0.5A, IB=100mA VCE=10V, IC=100mA, f =1MHz IB1= -IB2=0.2A IC=1A V V MHz µs µs http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jun-2011 Rev. A Page 1 of 2 3DD13003B Elektronische Bauelemente 1.5A , 700V NPN Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jun-2011 Rev. A Page 2 of 2