A1015

A1015 Elektronische Bauelemente -0.15A , -50V PNP Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Dissipation G H TO-92 J CLASSIFICATION OF hFE Product-Rank Range A1015-O 70~140 A1015-Y 120~240 A1015-GR 200~400 K A B D 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Rating -50 -50 -5 -150 400 125, -55~125 Unit V V V mA mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob NF Min. -50 -50 -5 70 80 - Typ. - Max. -0.1 -0.1 -0.1 400 -0.3 -1.1 7 6 Unit V V V µA µA µA V V MHz pF dB Test Conditions IC= -100µA, IE=0 IC= -0.1mA, IB=0 IE= -100µA, IC=0 VCB= -50V, IE=0 VCE= -50V, IB=0 VEB= -5V, IC=0 VCE= -6V, IC= -2mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC= -1mA, f=30MHz VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.1mA, f=1KHz, RG=10K http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 2 A1015 Elektronische Bauelemente -0.15A , -50V PNP Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 2 of 2