A733

A733 Elektronische Bauelemente -0.1A , -60V PNP Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Dissipation G H TO-92 J CLASSIFICATION OF hFE Product-Rank Range A733-R 90~180 A733-Q 135~270 A733-P 200~400 A733-K 300~600 K A B D 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Rating -60 -50 -5 -100 250 150, -55~150 Unit V V V mA mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob NF Min. -60 -50 -5 90 -0.58 100 - Typ. 200 -0.18 -0.62 - Max. -0.1 -0.1 600 -0.3 -0.68 6 20 Unit V V V µA µA V V MHz pF dB Test Conditions IC= -50µA, IE=0 IC= -1mA, IB=0 IE= -50µA, IC=0 VCB= -60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE = -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.3mA, f=100Hz, RG=10K http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. D Page 1 of 2 A733 Elektronische Bauelemente -0.1A , -60V PNP Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. D Page 2 of 2