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BAS05W

BAS05W

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BAS05W - Surface Mount Schottky Barrier Diodes - SeCoS Halbleitertechnologie GmbH

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS05W 数据手册
BAS40/-04W/-05W/-06W Elektronische Bauelemente Surface Mount Schottky Barrier Diodes RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 A L Top View BS FEATURES Low Turn-on Voltage Low Forward Voltage Very Low Capacitance Less Than 5.0pF @ 0V For high speed switching application, circuit protection Dim A B C D G H C Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 V G J K K J MECHANICAL DATA Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.006 grams (approx.) Mounting Position: Any D H L S V 3 1 2 All Dimension in mm 3 3 3 3 1 2 1 2 1 2 1 2 BAS40W Marking: 43 BAS40-04W Marking: 44 BAS40-05W Marking: 45 BAS40-06W Marking: 46 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Reverse Voltage Forward Continuous Current Single Forward Current, t≦10 ms Thermal Resistance (Note 1) Junction−to−Ambient (Note 2) Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction, Storage Temperature TJ, TSTG PF Symbol VR IF IFSM RθJA Ratings 40 200 600 508 311 325 1.8 -55 ~ +150 Unit V mA mA °C/W mW mW / °C °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Reverse Breakdown Voltage Reverse Current Forward Voltage Diode Capacitance Reverse Recovery Time Symbol V(BR)R IR VF1 VF2 CTOT tRR Min. 40 - Max. 200 380 1000 5.0 5 Unit V nA mV mV pF nS IR = 10 μA VR = 30V IF = 1mA IF = 40mA Test Conditions VR = 0, f=1MHz IRR = 1 mA, IR=IF=10mA, RL=100Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Sept-2008 Rev.C Page 1 of 2 BAS40/-04W/-05W/-06W Elektronische Bauelemente Surface Mount Schottky Barrier Diodes RATINGS AND CHARACTERISTIC CURVES 100 100 10 1.0 TA = 150 C 125 C 85 C IF, Forward Current (mA) 10 150 C 1.0 1 25 C 85 C 25 C 0.1 -40 C 0 0.1 0.2 0.3 -50 C 0.4 0.5 0.6 0.7 0.8 IR , Reverse Current (μA) 0.1 0.01 25 C 0.001 0 5 10 VF, Forward Voltage (V) 15 20 25 VR, Reverse Voltage (V) 30 35 40 Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 3.5 3.0 C T, Capacitance (pF) 2.5 2.0 1.5 1.0 0.5 0 0 5.0 10 15 20 25 30 35 40 V R, Reverse Voltage (V) Figure 3. Typical Capacitance http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Sept-2008 Rev.C Page 2 of 2
BAS05W
1. 物料型号: - BAS40/-04W/-05W/-06W,这些是表面贴装肖特基势垒二极管的型号。

2. 器件简介: - 这些二极管具有低开启电压、低正向电压、非常低的电容(小于5.0pF @ 0V),适用于高速开关应用和电路保护。

3. 引脚分配: - 封装类型为SOT-323,塑封塑料端子,可按照MIL-STD-202方法208进行焊接。具体极性见下图。

4. 参数特性: - 反向电压(VR):40V - 正向连续电流(IF):200mA - 单次正向电流(IFSM),t≤10 ms:600mA - 热阻(RBJA):311°C/W - 正向功耗(PF)@ TA=25°C:325mW,超过25°C时每度1.8mW/°C递减 - 存储温度(TJ,TSTG):-55~+150℃

5. 功能详解: - 电气特性(在Ta = 25°C下,除非另有说明): - 反向击穿电压(V(BRR)):40V - 反向电流(IR):200nA @ VR=30V - 正向电压(VF1):1mA时小于380mV - VF2:40mA时小于1000mV - 二极管电容(Cror):小于5.0pF @ VR=0, f=1MHz - 反向恢复时间(tRR):小于5ns @ IRR=1mA, IR=10mA, R=100

6. 应用信息: - 适用于高速开关应用和电路保护。

7. 封装信息: - 封装类型:SOT-323 - 重量:约0.006克 - 安装位置:任意
BAS05W 价格&库存

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