BAS16

BAS16 Elektronische Bauelemente FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L 3 Surface Mount Switching Diode · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance V 3 1 Top View 2 BS G C 3 CATHODE 1 ANODE 1 2 D H K J MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc SOT-23 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C All Dimension in mm DEVICE MARKING BAS16 = A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) 1.FR–5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com IR — — — V(BR) VF — — — — CD VFR trr QS — — — — 715 855 1000 1250 2.0 1.75 6.0 45 75 1.0 50 30 — µAdc Vdc mV pF Vdc ns pC 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 Elektronische Bauelemente Surface Mount Switching Diode BAS16 IF 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes VR Input Signal 90% IR IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) IF 0.1 µF tr 10% tp t trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85°C 10 TA = – 40°C IR , Reverse Current (µA) 10 TA = 150°C 1.0 TA = 125°C IF, Forward Current (mA) (mA) 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 VF, Forward Voltage (V) 1.0 1.2 0.001 0 10 20 30 VR, Reverse Voltage (V) 40 50 Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, Diode Capacitance (pF) 0.64 0.60 0.56 0.52 0 2 4 VR, Reverse Voltage (V) 6 8 Figure 4. Capacitance http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2