BAS16V

BAS16V 0.3A , 100V Elektronische Bauelemente Plastic-Encapsulated Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Fast switching speed For General Purpose Switching Applications High Conductance B A SOT-563 MARKING D J G F H E KAM C PACKAGE INFORMATION REF. Package SOT-563 MPQ 3K Leader Size 7 inch A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Non-Repetitive Peak reverse voltage Maximum Repetitive Peak Reverse Voltage Working Peak Reverse Voltage Maximum DC Blocking Voltage RMS Reverse Voltage Peak forward Continuous current Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms Single Half t=1.0µs Sine-Wave Super Imposed on Rated Load (JEDEC t=1.0s Method) Power dissipation Thermal Resistance Junction to Ambient Operating Junction and storage temperature range Symbol VRM VRRM VRWM VR VR(RMS) IFM IF(AV) IFSM Value 100 75 75 75 53 300 200 2.0 Unit V V V V V mA mA A 1.0 PD RθJA TJ,TSTG 150 833 150,-65~150 mW K/W ° C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 1 of 2 BAS16V 0.3A , 100V Elektronische Bauelemente Plastic-Encapsulated Transistors ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Reverse Breakdown Voltage Symbol V(BR)R VF1 VF2 VF3 VF4 IR1 IR2 CD TRR Min. 75 - Typ. - Max. 0.715 0.855 1 1.25 1 0.025 2.0 4.0 Unit V Test Condition IR=100µA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0 , f=1MHz IF=IR=10mA, IRR=0.1 x IR, RL=100 Forward Voltage V Reverse Voltage Leakage Current Diode Capacitance Reverse Recovery Time µA pF nS RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 2 of 2