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BAS19

BAS19

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BAS19 - Surface Mount Switching Diode - SeCoS Halbleitertechnologie GmbH

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS19 数据手册
BAS19 Elektronische Bauelemente FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Surface Mount Switching Diode A L 3 · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 3 Top View 1 2 BS V G C 3 CATHODE 1 ANODE 1 2 D H K J MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 120 200 500 Unit Vdc mAdc mAdc SOT-23 Dim A B C D Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C G H J K L S V All Dimension in mm DEVICE MARKING BAS19 = JP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 100 Vdc,TJ = 25OC) (VR = 100 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) 1.FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. IR — — — V(BR) VF — — — — CD — 715 855 1000 1250 5.0 50 mV 120 0.1 100 40 — µAdc Vdc pF ns trr http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 Elektronische Bauelemente Surface Mount Switching Diode BAS19 IF 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscopes VR Input Signal 90% IR IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) IF 0.1 µF tr 10% tp t trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 3500 3000 2500 Forward Voltage (mV) 2000 1500 1000 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 TA = 155°C TA = 25°C TA = –55°C 7000 6000 5000 Reverse Current (nA) 4000 3000 6 5 4 3 2 1 0 1 2 5 10 Forward Current (mA) TA = 155°C TA = 25°C TA = –55°C 20 50 100 200 300 Reverse Voltage (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2
BAS19
1. 物料型号:BAS19 2. 器件简介:BAS19是一种表面贴装开关二极管,具有快速开关速度,适合自动插入,用于一般目的的开关应用,具有高导通性,符合RoHS标准。产品后缀"-C"表示无卤素和无铅。 3. 引脚分配:文档中提供了两个引脚图示,分别显示了阳极(ANODE)和阴极(CATHODE)。 4. 参数特性: - 最大额定值: - 连续反向电压(VR):120 Vdc - 峰值正向电流(IF):200 mAdc - 峰值正向浪涌电流(IFM(surge)):500 mAdc - 热特性: - 总器件耗散(FR-5板):225 mW - TA= 25°C时的耗散降额:1.8 mW/°C - 热阻,结到环境(ROJA):556 °C/W - 总器件耗散(氧化铝基板):300 mW - TA = 25°C时的耗散降额:2.4 mW/°C - 热阻,结到环境(ROJA):417 °C/W - 结和存储温度(TJ,Tstg):55至+150℃ 5. 功能详解:BAS19是一种用于一般开关应用的表面贴装二极管,具有快速开关特性和高导通性。 6. 应用信息:适用于需要快速开关和高导通性的应用场合。 7. 封装信息:SOT-23封装,具体尺寸参数如下: - A:2.800至3.040 - B:1.200至1.400 - C:0.890至1.110 - D:0.370至0.500 - G:1.780至2.040 - H:0.013至0.100 - J:0.085至0.177 - K:0.450至0.600 - L:0.890至1.020 - S:2.100至2.500 - V:0.450至0.600
BAS19 价格&库存

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BAS19,215
  •  国内价格
  • 1+0.17204
  • 100+0.16057
  • 300+0.1491
  • 500+0.13763
  • 2000+0.1319
  • 5000+0.12846

库存:375

BAS19W-7-F
  •  国内价格
  • 1+0.28084
  • 10+0.25924
  • 30+0.25492
  • 100+0.24196

库存:182