BAS21

BAS21

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BAS21 - Surface Mount Switching Diodes - SeCoS Halbleitertechnologie GmbH

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS21 数据手册
BAS21 Series Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Surface Mount Switching Diodes FEATURES · · · A L High Voltage Switching Diode For General Purpose Switching Applications Surface Mount Package Ideally Suited for Automatic Insertion V Top View BS G C D H K J MECHANICAL DATA · · · · · Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any 1 2 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc SOT-23 Dim A B C D Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C G H J K L S V All Dimension in mm 3 3 3 3 1 2 1 2 1 2 1 2 BAS21 Marking: JS BAS21S Marking: JS4 BAS21C Marking: JS3 BAS21A Marking: JS2 http://www.SeCoSGmbH.com Any changing of specification will not be informed individua 01-Jun-2002 Rev. A Page 1 of 2 BAS21 Series Elektronische Bauelemente Surface Mount Switching Diodes ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR — — V(BR) VF — — CD trr — — 1000 1250 5.0 50 pF ns 250 1.0 100 — Vdc mV µAdc   0.062 in.   0.024 in. 99.5% alumina. 820 Ω +10 V 2k 100 µH 0.1 µF DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% VR Input Signal IR IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) IF 0.1 µF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 3500 3000 2500 Forward Voltage (mV) 2000 1500 1000 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 TA = 155°C TA = 25°C TA = –55°C 7000 6000 5000 Reverse Current (nA) 4000 3000 6 5 4 3 2 1 0 1 2 5 10 Forward Current (mA) TA = 155°C TA = 25°C TA = –55°C 20 50 100 200 300 Reverse Voltage (V) Figure 2. Forward Voltage http://www.SeCoSGmbH.com Figure 3. Reverse Leakage Any changing of specification will not be informed individua 01-Jun-2002 Rev. A Page 2 of 2
BAS21
### 物料型号 - 型号:BAS21系列,包括BAS21、BAS21S、BAS21C等。

### 器件简介 - 描述:高电压开关二极管,表面贴装封装,适合自动插入,用于一般目的的开关应用。

### 引脚分配 - 封装:SOT-23,塑封塑料端子,可按MIL-STD-202方法208焊接,任意位置安装。

### 参数特性 - 最大额定值: - 连续反向电压(VR):250Vdc - 峰值正向电流(IF):200mAdc - 峰值正向浪涌电流(IFM(surge)):625mAdc

- 热特性: - 总器件耗散(FR-5板,TA=25°C):225mW,1.8mW/°C - 热阻,结到环境(ROJA):556°C/W - 总器件耗散(氧化铝基板,TA=25°C):300mW,2.4mW/°C - 热阻,结到环境(ROJA):417°C/W - 结和存储温度(TJTstg):-55至+150°C

### 功能详解 - 电气特性(TA=25°C,除非另有说明): - 关断特性: - 反向电压漏电流(IR,VR=200Vdc):2至100uAdc - 反向击穿电压(V(BR),IBR=100mAdc):250Vdc - 正向电压(VF,IF=100mAdc至200mAdc):1000至1250mV - 二极管电容(CD,VR=0,f=1.0MHz):至5.0pF - 反向恢复时间(trr,IF=IR=30mAdc,RL=100Ω):至50ns

### 应用信息 - 应用:适用于一般目的的开关应用。

### 封装信息 - 尺寸:详细尺寸参数已提供,包括A至V的各个尺寸范围。
BAS21 价格&库存

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