BAT54H

BAT54H 30 Volt Silicon Hot-Carrier Detector Elektroni sche Bauelemente Surface Mount Schottky Barrier Diode RoHS Compliant Product FEATURES A suffix of "-C" specifies halogen & lead-free PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE · · · Low Turn-on Voltage Extremely Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection MECHANICAL DATA K A · · • • • Case: SOD-323, Molded Plastic Polarity: See Diagrams Below Mounting Position : Any Low Forward Voltage : 0.35 Volts (Typ) @ IF = 10 mAdc Shipping : 3000 / Tape & Reel E C 1 2 PIN 1. CATHODE 2. ANODE D 1 2 B 1 CATHODE 2 ANODE J NOTE 3 H B A T 5 4 H Ma rk ing : J V L4 , P MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Symbol VR Reverse Voltage Rating Value 30 Unit V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit mW mW/°C °C/W °C DIM A B C D E H J K RqJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF trr VF VF IF IFRM IFSM Min 30 — — — — — — — — — — — Typ — 7.6 0.5 0.22 0.41 0.52 — 0.29 0.35 — — — Max — 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40 200 300 600 Unit Volts pF µAdc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. B Page 1 of 2 BAT54H 30 Volt Silicon Hot-Carrier Detector Elektronische Bauelemente Surface Mount Schottky Barrier Diode 820 Ω +10 V 2k 100 µH 0.1 µF DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% VR Input Signal IR IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) IF 0.1 µF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 100 10 1 50°C IR , Reverse Current (µA) IF, Forward Current (mA) TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 V F, Forward Voltage (V) 10 15 20 VR, Reverse Voltage (V) 25 30 TA = 150°C 1 25°C 1.0 85°C 25°C – 40°C – 55°C 0.1 0.0 Figure 2. Forward Voltage Figure 3. Leakage Current 14 12 C T , Total Capacitance (pF) 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, Reverse Voltage (V) Figure 4. Total Capacitance http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2005 Rev. B Page 2 of 2