BAV70W

Elektronische Bauelemente Dual Chips Common Cathode Surface Mount Switching Diode BAV70W FEATURES . . . . RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L 3 1 Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Top View 2 BS V ANODE G C 1 3 CATHODE 2 ANODE D H K J MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit V dc mAdc mAdc SOT-323(SC-70) Dim A B C D G H J K L S V Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina S ubstrate,(2) AT=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 Unit mW mW/°C °C/W mW mW/°C °C /W °C R θJ A PD 0.625 300 2.4 R θJ A T J , Tstg 417 –55to+150 All Dimension in mm DEVICE MARKING B AV 70W = A 4, KJA ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Revers e B reakdown Voltage (I( BR) = 100 .Adc) R evers e Voltage Leakage C urrent (V R = 70 V dc) (V R = 70 V dc, T J = 150 °C ) Diode C apacitance (V R = 0, f = 1.0 MHz) F orward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) R evers e R ecovery Time (I F = I R = 10 mAdc, I R (R E C ) = 1.0 mAdc) (F igure 1) R L = 100 F orward R ecovery T ime (I F = 10 mAdc, t r = 20 ns ) (F igure 2) 1. FR… = 1.0 X 0.75 X 0.062 in. 5 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. 3. For each individual diode while the second diode is unbiased. V (B R ) IR 70 — V dc — — CD VF — — — — trr VR F — — 5.0 100 1.5 uAdc pF mV dc 715 855 1000 1250 6.0 ns — 1.75 V http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 1 of 3 Elektronische Bauelemente Dual Chips Common Cathode Surface Mount Switching Diode BAV70W BAV70 RS = 50 Ω IF SAMPLING OSCILLOSCOPE RL = 50 Ω tr tp I 10% +IF trr OUTPUT PULSE VR 90% INPUT PULSE 10% OF VR 100 W Figure 1. Recovery Time Equivalent Test Circuit 1 KΩ 450 Ω RS = 50 Ω BAV70 SAMPLING OSCILLOSCOPE RL = 50 Ω I V 90% VFR 10% t tr tp INPUT PULSE Figure 2. OUTPUT PULSE t http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 3 Elektronische Bauelemente 100 IF, FORWARD CURRENT (mA) Dual Chips Common Cathode Surface Mount Switching Diode BAV70W 10 TA = 855 C TA= 255 C TA= - 405 C O O O 1.0 0.1 0.2 0.4 0.6 0.8 1.0 VF FORWARD VOLTAGE (VOLTS) , 1.2 Fi g u re 3. Forward Voltag e 10 TA =1505 C IR , REVERSE CURRENT (µA) O 1.0 TA = 1255 C O 0.1 TA = 855 C O TA = 555 C 0.01 TA = 255 C O O 0.001 0 10 20 30 40 VR, R EV ERSE VOLTAGE (VOLTS) 50 Fi g u re 4. Leak ag e Cu rren t 1.0 CD, DIODE CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, R EV ERSE VOLTAGE (VOLTS) Fi g u r e 5. Cap ac i t an c e http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 3 of 3