BC327

BC327/BC328 Elektronische Bauelemente PNP General PurposeTransistor RoHS Compliant Product FEATURES Power dissipation A suffix of "-C" specifies halogen & lead-free TO-92 PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : BC327 -50 V BC328 -30 Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ 1 2 3 1 23 1. COLLECTOR 2. BASE 3 . EMITTER . ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage BC327 BC328 Collector-emitter breakdown voltage BC327 BC328 Emitter-base breakdown voltage Collector cut-off current BC327 BC328 Collector cut-off current BC327 BC328 Emitter cut-off current IEBO hFE(1) DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency hFE(2) VCE(sat) VBE(sat) ICEO VEBO ICBO VCEO Symbol VCBO unless otherwise specified) Test conditions MIN TYP MAX UNIT Ic= -100µA , IE=0 -50 -30 IC= -10 mA , IB=0 -45 -25 IE= -10µA, IC=0 -5 V V V V V VCB= -45V, IE=0 VCB= -25V, IE=0 -0.1 -0.1 µA µA VCE= -40V, IB=0 VCE= -20 V, IB=0 VEB= -4 V, IC=0 VCE=-1V, IC= -100mA VCE=-1V, IC= -300mA IC=-500 mA, IB= -50 mA IC= -500 mA, IB=-50 mA VCE= -5V, IC= -10mA 260 100 40 -0.2 -0.2 -0.1 630 µA µA µA -0.7 -1.2 V V MHz fT f = 100MHz hFE CLASSIFICATION Classification hFE1 hFE2 http://www.SeCoSGmbH.com 16 100-250 60- 25 160-400 100- 40 250-630 170Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 BC327/BC328 Elektronische Bauelemente PNP General PurposeTransistor -500 -20 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -400 -300 mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB = IB .5m =-1 IB= -16 μA - 80 μA - 70 IB= μA - 60 IB= IB P T 0μA =-5 IB= - 40 =6 00 mW -12 μA 30μA A -200 IB = - 1.0mA IB = - 0.5mA PT = 600 m -8 IB = - W 0μA IB = - 2 -4 -100 IB = - 10μA IB = 0 -0 -1 -2 -3 -4 -5 IB = 0 -10 -20 -30 -40 -50 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 PULSE V CE = - 2.0V IC = 10 IB PULSE V CE(sat) hFE, DC CURRENT GAIN 100 -1 - 1.0V 10 -0.1 V BE(sat) 1 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 1000 IC[mA], COLLECTOR CURRENT VCE = -1V PULSE -100 -10 fT[MHz], GAIN-BANDWIDTH PRODUCT VCE = -5.0V 100 -1 -0.1 -0.4 10 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 BC327/BC328 Elektronische Bauelemente PNP General PurposeTransistor TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b e e1 Dimensions In Millimeters Symbol A A1 b c D D1 E e e1 L Ö 0.000 2.440 14.100 Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.050TYP 0.096 0.555 0.185 0.104 0.571 0.063 0.000 0.015 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A C Page 3 of 3