BC327_11

BC327 / BC328 Elektronische Bauelemente PNP Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE Power Dissipation G H CLASSIFICATION OF hFE (1) Product-Rank Product-Rank Range BC327-16 BC328-16 100~250 BC327-25 BC328-25 160~400 BC327-40 BC328-40 K J A B D 1Collector 2Base 3Emitter REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 250~630 E C F Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature BC327 BC328 BC327 BC328 Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -30 -45 -25 -5 -800 625 150, -55~150 Unit V V V mA mW ° C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 3 BC327 / BC328 Elektronische Bauelemente PNP Plastic-Encapsulate Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown BC327 Voltage BC328 Collector to Emitter Breakdown BC327 Voltage BC328 Emitter to Base Breakdown Voltage BC327 Collector Cut-Off Current BC328 BC327 Collector Cut-Off Current BC328 Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) VBE fT Cob Min. -50 -30 -45 -25 -5 100 40 260 - Typ. 12 Max. -0.1 -0.1 -0.2 -0.2 -0.1 630 -0.7 -1.2 -1.2 - Unit V V V Test Conditions IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -10µA, IC=0 VCB= -45V, IE=0 µA VCB= -25V, IE=0 VCE= -40V, IB=0 µA VCE= -20V, IB=0 µA VEB= -4V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA V IC= -500mA, IB= -50mA V IC= -500mA, IB= -50mA V VCE= -1V, IC= -300mA MHz VCE= -5V, IC= -10mA, f=100MHz pF VCB= -10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 2 of 3 BC327 / BC328 Elektronische Bauelemente PNP Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 3 of 3