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BC546_11

BC546_11

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BC546_11 - NPN Plastic-Encapsulate Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
BC546_11 数据手册
BC546 / BC547 / BC548 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE Power Dissipation G H CLASSIFICATION OF hFE Product-Rank Product-Rank Product-Rank Range BC546A BC547A BC548A 110~220 BC546B BC547B BC548B 200~450 BC546C BC547C K J A B D 1Collector 2Base 3Emitter REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 BC548C 420~800 E C F Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage BC546 BC547 BC548 BC546 BC547 BC548 Symbol VCBO Ratings 80 50 30 65 45 30 6 100 625 150, -55~150 Unit V Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction, Storage Temperature VCEO VEBO IC PD TJ, TSTG V V mA mW ° C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 1 of 4 BC546 / BC547 / BC548 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter BC546 BC547 BC548 BC546 Collector to Emitter Breakdown BC547 Voltage BC548 Emitter to Base Breakdown Voltage BC546 Collector Cut-Off Current BC547 BC548 BC546 Collector Cut-Off Current BC547 BC548 BC546 Emitter Cut-Off Current BC547 BC548 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector to Base Breakdown Voltage Symbol V(BR)CBO Min. 80 50 30 65 45 30 6 110 150 Typ. - Max. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 800 0.3 1.1 - Unit V Test Conditions IC=100µA, IE=0 V(BR)CEO V(BR)EBO ICBO V V µA IC=1mA, IB=0 IE=10µA, IC=0 VCB=70V, IE=0 VCB=50V, IE=0 VCB=30V, IE=0 VCE=60V, IB=0 VCE=45V, IB=0 VCE=30V, IB=0 VEB=5V, IC=0 ICEO µA IEBO hFE VCE(sat) VBE(sat) fT µA VCE=5V, IC=2mA V IC=100mA, IB=5mA V IC=100mA, IB=5mA MHz VCE=5V, IC=10mA, f=100MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 2 of 4 BC546 / BC547 / BC548 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 3 of 4 BC546 / BC547 / BC548 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 4 of 4
BC546_11 价格&库存

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