BC556

Elektronische Bauelemente RoHS Compliant Product BC556, B, C BC557, A, B, C BC558, A, B, C TO-92 A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current - 0.1 A ICM: Collector-base voltage BC556 -80 V VCBO: BC557 -50 V BC558 -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage BC556 BC557 BC558 Collector-emitter breakdown voltage BC556 BC557 BC558 Emitter-base breakdown voltage Collector cut-off current BC556 BC557 BC558 Collector cut-off current BC556 BC557 BC558 Emitter cut-off current BC556 BC557 BC558 DC current gain BC556 BC557 BC558 BC557A/558A BC556B/BC557B/BC558B BC556C/BC557C/BC558C IEBO VEB= -5V, IC=0 ICEO ICBO VEBO VCEO = - 2mA , IB=0 VCBO 1 2 3 1 23 1. COLLECTOR 2. BASE 3 . EMITTER unless Symbol otherwise Test specified) MIN -80 MAX UNIT conditions Ic= -100µA , IE=0 -50 -30 -65 -45 -30 V V I E= -100µA, IC=0 VCB= -70V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= -60 V, IB=0 VCE= -40 V, IB=0 VCE= -25 V, IB=0 -6 -0.1 V µA -0.1 µA -0.1 120 120 120 120 180 420 500 800 800 220 460 800 -0.3 -1 µA hFE(1) VCE=-5V, IC= -2mA Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) I C=-100 mA, IB= -5mA I C= -100 mA, IB=-5mA VCE= -5V, IC= -10mA V V Transition frequency fT f = 100MHz 150 MHz Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 Elektronische Bauelemente BC556, B, C BC557, A, B, C BC558, A, B, C Typical Characteristics -50 -45 1000 IB = -400µA IB = -350µA VCE = -5V IC[mA], COLLECTOR CURRENT -40 -35 -30 -25 -20 -15 -10 -5 -0 -2 -4 -6 -8 -10 hFE, DC CURRENT GAIN IB = -300µA IB = -250µA IB = -200µA IB = -150µA IB = -100µA IB = -50µA 100 10 -12 -14 -16 -18 -20 1 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -100 -1 V BE(sat) IC[mA], COLLECTOR CURRENT IC = -10 IB VCE = -5V -10 -0.1 -1 VCE(sat) -0.01 -0.1 -0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 Cob(pF), CAPACITANCE 10 f=1MHz IE = 0 VCE = -5V 100 1 -1 -10 -100 10 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 Elektronische Bauelemente BC556, B, C BC557, A, B, C BC558, A, B, C TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b φ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A C Page 3 of 3