BC638

BC636/638/640 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55±0.2 PNP Type Plastic Encapsulate Transistors FEATURE Power Dissipation: PCM: 0.83 mW (Tamb=25oC) 3.5±0.2 4.5±0.2 14.3±0.2 01 0.46+0..1 – 0 08 0.43+0..07 – (1.27 Typ. ) 1.25–0.2 123 2.54±0.1 o + 0.2 1: Emitter 2: Collector 3: Base MAXIMUM RATINGS (TA=25 C unless otherwise specified) PARAMETERS Collector - Emitter Voltage BC636 BC638 BC640 Collector - Base Voltage BC636 BC638 BC640 Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Thermal Resistance from Junction to Ambient o SYMBOLS VCEO VALUES -45 -60 -80 UNIT V V V V V V V A A mA o VCBO -45 -60 -100 VEBO IC ICP IB TJ,TSTG RθJA* -5 -1 -1.5 100 150, -65 ~ 150 150 C K/w ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified) PARAMETERS Collector - emitter breakdown voltage Collector cut-off current Emitter cut-off current SYMBOL V(BR)CEO I CBO I EBO hFE(1) DC current gain hFE(2) hFE(3) Collector - emitter saturation voltage Base - emitter voltage Transition frequency VCE(sat) VBE(ON) fT VCB=-30V, IE=0 VEB=-5V, IB=0 VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA BC636-10 BC636-16, BC638-16, BC640-16 TEST CONDITIONS IC=10mA, IB=0 BC636 BC638 BC640 MIN -45 -60 -80 TYP MAX UNIT V V V µA µA -0.1 -0.1 40 63 100 25 160 250 -0.5 -1 100 VCE=-2V, IC=-500mA IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA VCE=-5V, IC=-50mA, f=100MHz V V MHz CLASSIFICATION OF h FE(2) RANK RANGE http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A BC636-10 63-160 BC636-16, BC638-16, BC640-16 100-250 Any changing of specification will not be informed individual Page 1 of 2 BC636/638/640 Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors TYPICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individu Page 2of 2