BC807-16

BC807-16, -25, -40 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free & RoHS compliant -500 mA, -50 V PNP Plastic Encapsulate Transistor FEATURES Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817 (NPN Type) 1 Base SOT-23 3 Collector Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 2 Emitter MARKING BC807-16:5A; BC807-25:5B; BC807-40:5C V 1 3 A L K BS 2 H J J K C Top View L S V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -45 -5 -500 300 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(sat) hFE(1) Min. -50 -45 -5 - Max. -0.1 -0.2 -0.1 -0.7 -1.2 250 400 600 - Unit V V V uA uA uA V V IC = -10 uA, IE = 0 IC = -10 mA, IB = 0 IE = -1 uA, IC = 0 VCB = -45V, IE = 0 VCE = -40V, IB = 0 VEB = -4V, IC = 0 Test Conditions IC = -500mA, IB = -50 mA IC = -500mA, IB = -50 mA VCE = -1 V, IC = -100 mA 807-16 807-25 807-40 100 160 250 100 fT MHz VCE = -5 V, IC = -10 mA, f = 100MHz 01-June-2002 Rev. B Page 1 of 2 BC807-16, -25, -40 Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. B Page 2 of 2