BC807-16W_10

BC807 -16W, -25W, -40W Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -500 mA, -50 V PNP Plastic Encapsulate Transistor FEATURES    SOT-323 A L 3 3 Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W 1 Top View 2 CB 1 2 PACKAGE INFORMATION Weight: 0.0074 g (approximately) Collector K E D  F REF. G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. J MARKING BC807-16W: BC807-25W: BC807-40W: 5A 5B 5C, YL  Base  Emitter A B C D E F ABSOLUTE MAXIMUM RATINGS at Ta = 25°C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS -50 -45 -5 -500 200 +150, -55 ~ +150 UNIT V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(on) hFE(1) MIN. -50 -45 -5 - MAX. -0.1 -0.2 -0.1 -0.7 -1.2 250 400 600 10 UNIT V V V uA uA uA V V TEST CONDITIONS IC = -10 uA, IE = 0 IC = -10 mA, IB = 0 IE = -1 uA, IC = 0 VCB = -20V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 IC = -500mA, IB = -50 mA VCE = -1 V, IC = -500 mA VCE = -1 V, IC = -100 mA VCE = -1 V, IC = -500 mA 807-16W 807-25W 807-40W 100 160 250 40 80 - hFE(2) fT COB MHz pF VCE = -5 V, IC = -10 mA, f = 100MHz VCB = -10V, f=1MHz 28-Jul-2010 Rev. F Page 1 of 3 BC807 -16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 28-Jul-2010 Rev. F Page 2 of 3 BC807 -16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 28-Jul-2010 Rev. F Page 3 of 3