BC807-40W

BC807-16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor FEATURES Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W MARKING 16W:5A; 25W:5B; 40W:5C PACKAGE DIMENSIONS REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -45 -5 500 200 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(on) hFE(1) Min. -50 -45 -5 - Max. -0.1 -0.2 -0.1 -0.7 -1.2 250 400 600 10 Unit V V V uA uA uA V V IC = -10 uA, IE = 0 IC = -10 mA, IB = 0 IE = -1 uA, IC = 0 VCB = -20V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 Test Conditions IC = -500mA, IB = -50 mA VCE = -1 V, IC = -500 mA VCE = -1 V, IC = -100 mA VCE = -1 V, IC = -500 mA 807-16W 807-25W 807-40W 100 160 250 40 80 - hFE(2) fT COB MHz pF VCE = -5 V, IC = -10 mA, f = 100MHz VCB = -10V, f=1MHz 01-June-2002 Rev. A Page 1 of 3 BC807-16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 3 BC807-16W, -25W, -40W Elektronische Bauelemente -500 mA, -50 V PNP Plastic Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 3 of 3