0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC808

BC808

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BC808 - -0.8A , -30V PNP Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
BC808 数据手册
BC808 Elektronische Bauelemente -0.8A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Suitable for AF-Driver stages and low power output stages Complementary to BC818 A L 3 SOT-23 3 Top View 1 2 CB 1 2 CLASSIFICATION OF hFE(1) Product-Rank Range Marking Code K E D BC808-16 100~250 5E BC808-25 160~400 5F BC808-40 250~630 5G F REF. A B C D E F G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package SOT-23 MPQ 3K Leader Size 7 inch Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -30 -25 -5 -800 300 150, -65 ~ 150 Unit V V V mA mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector output capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE fT Cob Min. -30 -25 -5 100 60 - Typ. 100 12 Max. -0.1 -0.1 630 -0.7 -1.2 - Unit V V V µA µA Test Conditions IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -25V, IE=0 VEB= -4V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=50MHZ VCB= -10V, IE=0, f=1MHZ V V MHz pF Any changes of specification will not be informed individually. 15-Jul-2011 Rev. A Page 1 of 3 BC808 Elektronische Bauelemente -0.8A , -30V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jul-2011 Rev. A Page 2 of 3 BC808 Elektronische Bauelemente -0.8A , -30V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Jul-2011 Rev. A Page 3 of 3
BC808 价格&库存

很抱歉,暂时无法提供与“BC808”相匹配的价格&库存,您可以联系我们找货

免费人工找货