BC817-16W

BC817 -16W, -25W, -40W Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 500 mA, 50 V NPN Plastic Encapsulate Transistor FEATURES     SOT-323 A L 3 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage 1 Top View 2 CB 1 2 K E D PACKAGE INFORMATION Weight: 0.0074 g (approximately) F G REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. J Collector  MARKING BC817-16W: BC817-25W: BC817-40W: 6A 6B 6C , YM  Base  Emitter ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 50 45 5 500 300 -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE(1) Min. 50 45 5 - Max. 0.1 0.1 0.7 1.2 1.2 Unit V V V uA uA V V V Test Conditions IC = 10 uA, IE = 0 IC = 10 mA, IB = 0 IE = 1 uA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 IC = 500mA, IB = 50 mA IC = 500mA, IB = 50 mA VCE = 1V, IC = 500mA VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 500 mA VCE = 5 V, IC = 10 mA, f = 100MHz VCB = 10V, f=1MHz Base-emitter Voltage DC Current Gain DC Current Gain Transition Frequency Collector Capacitance 100 40 100 - 600 5 MHz pF hFE(2) fT CC CLASSIFICATION OF hFE(1) Rank Range BC817-16W 100 - 250 BC817-25W 160 - 400 BC817-40W 250 - 600 28-Jul-2010 Rev. C Page 1 of 2 BC817 -16W, -25W, -40W Elektronische Bauelemente 500 mA, 50 V NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES 28-Jul-2010 Rev. C Page 2 of 2