BC817-16_09

BC817 -16, -25, -40 Elektronische Bauelemente 500 mA, 50 V NPN Plastic Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Collector SOT-23 3 A L 3 3 1 Base Top View 1 2 CB 1 2 2 Emitter K E D F REF. A B C D E F G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 J ABSOLUTE MAXIMUM RATINGS at TA = 25°C PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 50 45 5 500 300 150, -55 ~ +150 UNIT V V V mA mW ° C CHARACTERISTICS at TA = 25°C PARAMETER Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage Collector Capacitance Transition Frequency SYMBOL VCBO VCEO VEBO ICBO IEBO hFE(1) MIN. 50 45 5 100 40 100 TYP. 10 - MAX. 0.1 0.1 600 0.7 1.2 1.2 - UNIT V V V µA µA TEST CONDITIONS IC = 10 µA, IE = 0 IC = 10 mA, IB = 0 IE = 1 µA, IC = 0 VCB = 45V, IE = 0 VEB = 4V, IC = 0 VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 500 mA hFE(2) VCE(sat) VBE(sat) VBE Cob fT V V V pF MHz IC = 500mA, IB = 50 mA IC = 500mA, IB = 50 mA VCE = 1V, IC = 500mA VCB = 10V, f=1MHz VCE = 5 V, IC = 10 mA, f = 100MHz CLASSIFICATION OF hFE(1) Rank Range Marking BC817-16 100 - 250 6A BC817-25 160 - 400 6B BC817-40 250 - 600 6C 16-Nov-2009 Rev. D Page 1 of 2 BC817 -16, -25, -40 Elektronische Bauelemente 500 mA, 50 V NPN Plastic Encapsulate Transistors CHARACTERISTIC CURVES 16-Nov-2009 Rev. D Page 2 of 2