BC817-40

El ektronische Baue leme nte BC817-16 BC817-25 NPN Transistor BC817-40 RoHS Compliant Product FEATURES n A suffix of "-C" specifies halogen & lead-free SOT-23 n n n n n n n Power dissipation PCM: 300 mW (Tam b=25 C) Collector current ICM: 500 m A Collector-base voltage V(BR)CBO: 30 V Operating and junction tem perature range TJ, Tstg: -55 C to +150 C For general AF applications High collector current High current gain Low collector-emitter saturation voltage o o o 3 1 2 A L BS COLLECTOR Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 3 1 BASE 3 2 EMITTER 2 H J K L S Top View 1 V G C D H K J V All Dimension in mm ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Em itter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage & saturation voltage Transition frequency Collector output capacitance Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO I EBO hFE(1) hFE(2) VCE(sat) VBE & VBE(sat) Test conditions MI N TYP MAX UNIT V V V o Ic=100µA, IE=0 Ic=10 m A, IB=0 IE=1µA, IC=0 VCB=45V, IE=0 VEB=4V, IC=0 VCE=1V, IC=100m A VCE=1V, IC=500m A IC=500m A, IB=50m A VCE=1 V, IC=500 m A IC=500m A, IB=50m A VCE=5V, IC=10m A, f=100MHz VCB=10V, f=1MHz 50 45 5 0.1 0.1 100 40 600 µA µA 0.7 1.2 100 10 V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking BC817- 16 100-250 6A BC817-25 160-400 6B BC817-40 250-600 6C http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. C Page 1 of 2 Elektronische Bauelemente BC817-16 BC817-25 NPN Transistor BC817-40 TYPICAL CHARACTERISTICS http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2007 Rev. C Page 2 of 2