BC847BV
Dual NPN Transistors
Elektronische Bauelemente
RoHS Compliant Product
Plastic-Encapsulate Transistors
SOT-563
.051(1.30) .043(1.10) .002(0.05) .000(0.00)
FEATURES
* Epitaxial Die Construction * Complementary PNP Type Available (BC857BV) * Ultra-Small Surface Mount Package
.012(0.30) .004(0.10)
.067(1.70) .059(1.50)
.022(0.55) .018(0.45) .011(0.27) .007(0.17)
Marking:K4V
.067(1.70) .059(1.50) 7o REF. .006(0.16) .004(0.09) .024(0.60) .021(0.525)
MAXIMUM RATINGS* TA=25.
Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg
unless otherwise noted
Parameter
Dimensions in inches and (millimeters)
Value 50 45 6 0.1 0.15 833 150 -55-150
o
7o RE .
F
Units V V V A W C/W
o o
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance. Junction to Ambient Air Junction Temperature Storage Temperature
C C
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) VBE fT Cob NF
unless otherwise
Test conditions IC=10µA,IE=0 IC=10mA,IB=0 IE=1µA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=5V,IC=2mA IC=10mA,IB=0.5mA IC=100mA,IB=5mA IC=10mA,IB=0.5mA IC=100mA,IB=5mA VCE=5V,IC=2mA VCE=5V,IC=10mA
specified)
MI N 50 45 6 15 100 200 450 100 300 700 900 580 100 4.5 10 660 700 770 mV TYP MAX UNIT V V V nA nA
mV mV MHz pF dB
VCE=5V,IC=10mA,f= 100MHz VCB=10V,IE=0,f=1MHz VCE=5V,Rs=2kΩ, f=1kHz,BW=200Hz
Noise Figure
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
23-Mar-2007 Rev. A
Page 1 of 2
BC847BV
Dual NPN Transistors
Elektronische Bauelemente
Plastic-Encapsulate Transistors
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
23-Mar-2007 Rev. A
Page 2 of 2