BC847BW

Elektronische Bauelemente BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   Ideally suited for automatic insertion For Switching and AF Amplifier Applications Base Emitter Collector SOT-323 A Collector L 3 3 MARKING BC846AW=1A;BC846BW=1B; BC847AW=1E;BC847BW=1F;BC847CW=1G; BC848AW=1J;BC848BW=1K;BC848CW=1L  Top View 1 2 CB 1 2  Base K E D  Emitter F REF. A B C D E F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. J ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted ) PARAMETER BC846W Collector to Base Voltage BC847W BC848W BC846W Collector to Emitter Voltage BC847W BC848W BC846W Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature BC847W BC848W IC PC TJ, TSTG VEBO VCEO VCBO SYMBOL RATINGS 80 50 30 65 45 30 6 6 5 0.1 150 150, -55 ~ 150 UNIT V V V A mW ℃ 24-Mar-2010 Rev. A Page 1 of 4 Elektronische Bauelemente BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW NPN Plastic Encapsulate Transistor ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified ) PARAMETER BC846W Collector to Base Breakdown Voltage BC847W BC848W BC846W Collector to Emitter Breakdown Voltage BC847W BC848W BC846W Emitter to Base Breakdown Voltage Collector Cutoff Current Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter Voltage BC846AW,BC847AW,BC848AW BC846BW,BC847BW,BC848BW DC Current Gain BC847CW,BC848CW BC846AW,BC847AW,BC848AW BC846BW,BC847BW,BC848BW BC847CW,BC848CW hFE(1) SYMBOL VCBO MIN. 80 50 30 65 TYP. MAX. UNIT V TEST CONDITIONS IC = 10 uA, IE = 0 VCEO 45 30 6 - - V IC = 10 mA, IB = 0 BC847W BC848W VEBO ICBO VCE(sat) VBE(sat) VBE(on) 6 5 580 110 0.7 0.9 660 90 150 270 15 0.25 0.6 700 770 220 V nA V V mV IE = 1 μA, IC = 0 VCB = 30 V IC = 10mA, IB = 0.5 mA IC = 100mA, IB = 5 mA IC = 10mA, IB = 0.5 mA IC = 100mA, IB = 5 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 μA hFE(2) 200 420 - 450 800 VCE = 5 V, IC = 2 mA Transition Frequency Collector Output Capacitance BC846AW,BC847AW,BC848AW fT COb NF 100 - - 4.5 10 4 MHz pF dB VCE = 5 V, IC = 10 mA, f = 100MHz VCB = 10 V, f=1MHz VCE= 5 V, IC= 0.2 mA, f= 1KHz, RS= 2 KΩ, BW= 200Hz Noise Figure BC846BW,BC847BW,BC848BW BC847CW,BC848CW 24-Mar-2010 Rev. A Page 2 of 4 Elektronische Bauelemente BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES 24-Mar-2010 Rev. A Page 3 of 4 Elektronische Bauelemente BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES 24-Mar-2010 Rev. A Page 4 of 4