BC847CT

BC847AT /BC847BT /BC847CT Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free NPN Plastic Encapsulate Transistor FEATURES   Ideally suited for automatic insertion For Switching and AF Amplifier Applications A SOT-523 Base Emitter Collector 3 MARKING Product BC847AT BC847BT BC847CT Marking Code 1E 1F 1G F 1 M 3 Top View 2 CB 1 2 K L E D G H J REF. PACKAGE INFORMATION Package SOT-523 MPQ 3K LeaderSize 7’ inch A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 REF. G H J K L M Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 50 45 6 0.1 150 150, -55 ~ 150 Unit V V V A mW ℃ http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 1 of 3 BC847AT /BC847BT /BC847CT Elektronische Bauelemente NPN Plastic Encapsulate Transistor ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified ) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter Voltage BC847AT DC Current Gain BC847BT BC847CT Transition Frequency Collector Output Capacitance Noise Figure BC847BT BC847CT fT COb NF hFE Symbol VCBO VCEO VEBO ICBO VCE(sat) VBE(sat) VBE(on) Min. 50 45 6 580 110 200 420 100 - Typ. 0.7 0.9 660 - Max. 15 0.25 0.6 700 770 220 450 800 4.5 10 4 Unit V V V nA V V mV Test Conditions IC = 10 μA, IE = 0 IC = 10 mA, IB = 0 IE = 1 μA, IC = 0 VCB = 30 V IC = 10mA, IB = 0.5 mA IC = 100mA, IB = 5 mA IC = 10mA, IB = 0.5 mA IC = 100mA, IB = 5 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 2 mA MHz pF dB VCE = 5 V, IC = 10 mA f = 100MHz VCB = 10 V, f=1MHz VCE= 5V, BW= 200HZ, f= 1KHz, RS= 2 kΩ http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 2 of 3 BC847AT /BC847BT /BC847CT Elektronische Bauelemente NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2011 Rev. A Page 3 of 3