BC847PN

BC847PN Elektronische Bauelemente RoHS Compliant Product NPN - PNP Silicon Multi-Chip Transistor SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W (Temp. = 25˚C) Collector Current ICM : 0.1A Collector-base Voltage V(BR)CBO : 50/-50 V Operating & Storage Junction Temperature    TJ, TSTG : -55˚C~+150˚C C1 B2 E2 MARKING 7P    E1 B1 C2 ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent – Continuous Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ TSTG VALUE 50 45 6 100 200 150 -55 ~ +150 UNITS V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transister) at Ta = 25°C CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-emitter Saturation Voltage TEST CONDITION IC=10μA, IE=0 IC = 10 mA, IB = 0 IE=1μA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VCE(sat) VBE(sat) VBE(sat) VBE(On) VBE(On) Cob fT NF MIN. 50 45 6 TYP. MAX. UNIT V V V 15 15 200 450 0.25 0.6 0.7 0.9 0.58 0.7 0.72 6.0 100 10 nA nA V V V V V V pF MHz dB Page 1 of 3 Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, VCE=5V IC=10mA, VCE=5V Base-Emitter Voltage Collector Output Capacitance Transition Frequency Noise Figure 20-Oct-2009 Rev. C VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA, f=100MHz VCE=5V, IC=0.2mA, f=1kHz Rg=2KΩ, △f=200Hz BC847PN Elektronische Bauelemente NPN - PNP Silicon Multi-Chip Transistor ABSOLUTE MAXIMUM RATINGS OF TR2 at Ta = 25°C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent – Continuous Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC RθJA TSTG VALUE -50 -45 -5 -100 200 150 -55 ~ -150 UNITS V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS OF TR2 (PNP Transister) at Ta = 25°C CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter=Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector Output Capacitance Transition Frequency Noise Figure TEST CONDITION IC=-10μA, IE=0 IC = -10 mA, IB = 0 IE=-1μA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-2mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-10mA, f=100MHz VCE=-5V, IC=-0.2mA, f=1kHz Rg=2KΩ, △f=200Hz SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VCE(sat) VBE(sat) VBE(sat) VBE(On) VBE(On) Cob fT NF MIN. -50 -45 -5 TYP. MAX. UNIT V V V -15 -15 220 475 -0.3 -0.65 -0.7 -0.6 -0.95 -0.75 -0.82 4.5 100 10 nA nA V V V V V V pF MHz dB CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 2 of 3 BC847PN Elektronische Bauelemente NPN - PNP Silicon Multi-Chip Transistor CHARACTERISTIC CURVES 20-Oct-2009 Rev. C Page 3 of 3